Oriol Pietx i Casas

Title of Poster
Hot-qubits in Si/SiGe
Abstract Regular

Gate-based accumulation devices for quantum information processing are usually operated at the 20mK regime, where charge noise is minimized, and phonon processes are almost negligible. In recent years, operation at higher temperatures has gained interest in the community since operating at higher temperatures unlocks simpler and more powerful cooling systems, ideal for co-integration with the necessary electronics. We present the performance of our standard Si28/SiGe devices (operating four dots) as the temperature is increased, a platform yet to be shown at higher temperatures. We are studying the effects of temperature on single-qubit timescales ($T_1, T_2^*, T_2^{CPMG}$), the exchange interaction range, and the noise spectra at the sensors and at the qubits.

Poster Session