Peter Stano

Affiliation

RIKEN

Talk title

A hole-spin qubit

Abstract Invited

I will discuss our recent theoretical work on hole-spin qubits in gated Si quantum dots. I will focus on the differences between the results calculated with the standard lowest-order model, known as the Luttinger model, and its extension by the next-order terms in the k-dot-p expansion. In other words, I will discuss the adequacy of using the Luttinger model to analyze spin-related properties of holes confined in semiconducting quantum dots.

I will also advertise that the data in the review of gated spin qubits [2] can be accessed online.

Figure of Stano's abstract — **Figure:** Inhomogeneous dephasing time of a gated p-Siquantum dot as a function of the magnetic field orientation and vertical electric field of a triangular heterostructure confinement [1].

[1] O. Malkoc, P. Stano, D. Loss, Charge-noise induced dephasing in Silicon hole-spin qubits, arxiv:2202.06181
[2] P. Stano, D. Loss, Review of performance metrics of spin qubits in gated semiconducting nanostructures, Nat. Rev. Phys. (2022); see also https://github.com/PeterStano/ReviewOfSpinQubits

Uploaded File Invited

abstract_Stano.pdf (1.25 MB)