I will discuss our recent theoretical work on hole-spin qubits in gated Si quantum dots. I will focus on the differences between the results calculated with the standard lowest-order model, known as the Luttinger model, and its extension by the next-order terms in the k-dot-p expansion. In other words, I will discuss the adequacy of using the Luttinger model to analyze spin-related properties of holes confined in semiconducting quantum dots.
I will also advertise that the data in the review of gated spin qubits  can be accessed online.
 O. Malkoc, P. Stano, D. Loss, Charge-noise induced dephasing in Silicon hole-spin qubits, arxiv:2202.06181
 P. Stano, D. Loss, Review of performance metrics of spin qubits in gated semiconducting nanostructures, Nat. Rev. Phys. (2022); see also https://github.com/PeterStano/ReviewOfSpinQubits