Romain Maurand

Recently, hole spins in silicon and germanium have shown increasing interest for quantum information processing owing to the advantage of manipulating their state with electric instead of magnetic microwave fields [1,2]. This is possible due to the strong spin-orbit interaction intrinsically present in the valance band of these materials. Spin-orbit coupling should as well offer the possibility to couple a hole spin to the electric field component of a microwave photon.

Here we show a strong hole spin-photon interaction on a CMOS compatible platform. We find a coupling strength of 300 MHz, exceeding the spin decoherence rate and the photon decay rate by a factor 27. Our coupling largely exceeds the best figures reported so far in the case of electrons in silicon [3, 4], opening the door to the achievement of high-fidelity two qubits gate with distant spins.

References
[1] F. Giustino et al 2020 J. Phys. Mater. 3 042006.
[2] G. Scappucci et al., Nat Rev Mater 6, 926–943 (2021).
[3] Mi, X., et al., Nature 555, 599 (2018)
[4] P. Harvey-Collard, arXiv:2108.01206